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www.lansdale.com page 1 of 9 issue a ml3356 wideband fsk receiver legacy device: motorola mc3356 the ml3356 includes oscillator, mixer, limiting if amplifier, quadrature detector, audio buffer, squelch, meter drive, squelch status output, and data shaper comparator. the ml3356 is designed for use in digital data communciations equipment. ? data rates up to 500 kilobaud ? excellent sensitivity: ?3 db limiting sensitivity 30 ?rms @ 100 mhz ? highly versatile, full function device, yet few external parts are required ? down converter can be used independently ?similar to ne602 ? operating temperature range t a = ?0 to +85? p dip 20 = rp plastic package case 738 so 20w = -6p plastic package case 751d (so?0l) motorola p dip 20 mc3356p ml3356rp so 20w mc3356dw ml3356-6p lansdale package note : lansdale lead free ( pb ) product, as it becomes available, will be identified by a part number prefix change from ml to mle . 20 1 2 3 4 5 6 7 8 9 10 19 18 17 16 15 14 13 12 11 rf ground osc emitter osc collector rf v cc mixer output if v cc limiter input limiter bias limiter bias quad bias rf input ground data output + comparator ?comparator squelch control quad input squelch status buffered output demodulator filter pin connections figure 1. representative block diagram rf v cc rf ground 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 ceramic filter v cc quadrature detector tank limiter comparator meter current buffer + + data shaping comparator mixer osc rf input ground data output v cc squelch status hysteresis squelch adjust (meter)
www.lansdale.com page 2 of 9 issue a lansdale semiconductor, inc. ml3356 maximum ratings rating symbol value unit power supply voltage v cc(max) 15 vdc operating power supply voltage range (pins 6, 10) v cc 3.0 to 9.0 vdc operating rf supply voltage range (pin 4) rf v cc 3.0 to 12.0 vdc junction temperature t j 150 c operating ambient temperature range t a ?40 to + 85 c storage temperature range t stg ?65 to + 150 c power dissipation, package rating p d 1.25 w electrical characteristics (v cc = 5.0 vdc, f o = 100 mhz, f osc = 110.7 mhz, ? f = 75 khz, f mod = 1.0 khz, 50 source, t a = 25 c, test circuit of figure 2, unless otherwise noted.) characteristics min typ max unit drain current total, rf v cc and v cc 20 25 madc input for ?3 db limiting 30 vrms input for 50 db quieting s + n n () 60 vrms mixer voltage gain, pin 20 to pin 5 2.5 v /v mixer input resistance, 100 mhz 260 mixer input capacitance, 100 mhz 5.0 pf mixer/oscillator frequency range (note 1) 0.2 to 150 mhz if/quadrature detector frequency range (note 1) 0.2 to 50 mhz am rejection (30% am, rf v in = 1.0 mvrms) 50 db demodulator output, pin 13 0.5 vrms meter drive 7.0 a/db squelch threshold 0.8 vdc note: 1. not taken in test circuit of figure 2; new component values required. figure 2. test circuit l1 ?110.7 mhz, 0.4 h l1 ? 7t #22, 3/16 form l1 ? w/slug & can l2 ?10.7 mhz, 1.5 h l2 ? 20t #30, 3/16 form l2 ? w/slug & can t1 ?murata t1 ? sfe10.7 ma5? or kyocera t1 ? kbf10.7mn?a 100 mhz rf input 0.01 51 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 data output 10 k 47 k 0.01 390 k 47 k 130 k 3.3 k 3.0 k 3.3 k 0.1 470 pf 18 k 18 k 150 pf l2 0.01 330 0.01 t1 v cc 5 vdc 330 0.01 l1 5.6 pf 15 pf rf input ground data output comp(+) comp(? squelch status squelch control demod out demod filter quad input rf gnd osc em. osc col. rf v cc mixer out v cc limiter input limiter bias limiter bias quad bias squelch status demod out
www.lansdale.com page 3 of 9 issue a lansdale semiconductor, inc. ml3356 figure 3. output components of signal, noise, and distortion figure 4. meter current versus signal input 10 0 ?0 ?0 ?0 ?0 ?0 ?0 0.01 0.1 1.0 10 input (mvrms) ) b d ( t u p t u o e v i t a l e r s + n + d f o = 100 mhz fm = 1.0 khz ? f = 75 khz n + d n 700 600 500 400 300 200 100 0 0.010 0.1 1.0 10 100 1000 pin 20 input (mvrms) ) a ( 4 1 n i p , t n e r r u c r e t e m g e n e ral d e scri p tion this device is intended for single and double conversion vhf receiver systems, primarily for fsk data transmission up to 500 k baud (250 khz). it contains an oscillator, mixer, lim- iting if, quadrature detector, signal strength meter drive, and data shaping amplifier. the oscillator is a common base colpitts type which can be crystal controlled, as shown in figure 1, or l? controlled as shown in figure 8. at higher v cc , it has been operated as high as 200 mhz. a mixer/oscillator voltage gain of 2 up to approximately 150 mhz, is readily achievable. the mixer functions well from an input signal of 10 ?rms, below which the squelch is unpredictable, up to about 10 mvrms, before any evidence of overload. operation up to 1.0 vrms input is permitted, but non?inearity of the meter output is incurred, and some oscillator pulling is suspected. the am rejection above 10 mvrms is degraded. the limiting if is a high frequency type, capable of being operated up to 50 mhz. it is expected to be used at 10.7 mhz in most cases, due to the availability of standard ceramic res- onators. the quadrature detector is internally coupled to the if, and a 5.0 pf quadrature capacitor is internally provided. the ?db limiting sensitivity of the if itself is approximately 50 ? (at pin 7), and the if can accept signals up to 1.0 vrms without distortion or change of detector quiescent dc level. the if is unusual in that each of the last 5 stages of the 6 state limiter contains a signal strength sensitive, current sink- ing device. these are parallel connected and buffered to pro- duce a signal strength meter drive which is fairly linear for if input signals of 10 ? to 100 mvrms (see figure 4). a simple squelch arrangement is provided whereby the meter current flowing through the meter load resistance flips a comparator at about 0.8 vdc above ground. the signal strength at which this occurs can be adjusted by changing the meter load resistor. the comparator (+) input and output are available to permit control of hysteresis. good positive action can be obtained for if input signals of above 30 ?rms. the 130 k resistor shown in the test circuit provides a small amount of hysteresis. its connection between the 3.3k resistor to ground and the 3.0 k pot, permits adjustment of squelch level without changing the amount of hysteresis. the squelch is internally connected to both the quadrature detector and the data shaper. the quadrature detector output, when squelched, goes to a dc level approximately equal to the zero signal level unsquelched. the squelch causes the data shaper to produce a high (v cc ) output. the data shaper is a complete ?loating comparator, with back to back diodes across its inputs. the output of the quad- rature detector can be fed directly to either input of this ampli- fier to produce an output that is either at v cc or v ee , depending upon the received frequency. the impedance of the biasing can be varied to produce an amplifier which ?ollows frequency detuning to some degree, to prevent data pulse width changes. when the data shaper is driven directly from the demodula- tor output, pin 13, there may be distortion at pin 13 due to the diodes, but this is not important in the data application. a use- ful note in relating high/low input frequency to logic state: low if frequency corresponds to low demodulator output. if the oscillator is above the incoming rf frequency, then high rf frequency will produce a logic low (input to (+) input of data shaper as shown in figures 1 and 2). a pp lication not e s the ml3356 is a high frequency/high gain receiver that requires following certain layout techniques in designing a sta- ble circuit configuration. the objective is to minimize or elim- inate, if possible, any unwanted feedback.
www.lansdale.com page 4 of 9 issue a lansdale semiconductor, inc. ml3356 figure 5. application with fixed bias on data shaper 1 ml3356 rf in 1:2 0.01 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 23 15 pf 5.6 pf data out 5.0 v 18 k 10 k 390 k 10 k car. det. out 0 v or 4.0 v 3.3 k 130 k 3.0 k 0.1 3.3 k 470 pf 15 k 18 k 150 pf 5.0 v + 5.0 to + 12 v 0.01 f o bead 4.0 v 180 0.01 82 0.1 cer. fil. 10.7 mhz 330 0.01 0.01 0.01 bead 0.1 rf input ground data output comp(+) comp(? squelch status squelch control demod out demod filter quad input rf gnd osc em. osc col. rf v cc mixer out v cc limiter input limiter bias limiter bias quad bias 330 a pp lication not e s (continued) shielding, which includes the placement of input and output components, is important in minimizing electrostatic or elec- tromagnetic coupling. the ml3356 has its pin connections such that the circuit designer can place the critical input and output circuits on opposite ends of the chip. shielding is nor- mally required for inductors in tuned circuits. the ml3356 has a separate v cc and ground for the rf and if sections which allows good external circuit isolation by minimizing common ground paths. note that the circuits of figures 1 and 2 have rf, oscillator, and if circuits predominantly referenced to the plus supply rails. figure 5, on the other hand, shows a suitable means of ground referencing. the two methods produce identical results when carefully executed. it is important to treat pin 19 as a ground node for either approach. the rf input should be ?rounded to pin 1 and then the input and the mixer/oscilla- tor grounds (or rf v cc bypasses) should be connected by a low inductance path to pin 19. if and detector sections should also have their bypasses returned by a separate path to pin 19. v cc and rf v cc can be decoupled to minimize feedback, although the configuration of figure 2 shows a successful implementation on a common 5.0 v supply. once again, the message is: define a supply node and a ground node and return each section to those nodes by separate, low impedance paths. the test circuit of figure 2 has a 3 db limiting level of 30 ? which can be lowered 6 db by a 1:2 untuned transformer at the input as shown in figures 5 and 6. for applications that require additional sensitivity, an rf amplifier can be added, but with no greater than 20 db gain. this will give a 2.0 to 2.5 ? sensitivity and any additional gain will reduce receiver dynamic range without improving its sensitivity. although the test circuit operates at 5.0 v, the mixer/oscillator optimum per- formance is at 8.0 v to 12 v. a minimum of 8.0 v is recom- mended in high frequency applications (above 150 mhz), or in pll applications where the oscillator drives a prescaler. legacy applications information
www.lansdale.com page 5 of 9 issue a lansdale semiconductor, inc. ml3356 figure 6. application with self?djusting bias on data shaper rf in 1:2 0.01 20 19 18 17 16 15 14 13 12 11 data out 5.0 v 10 k car. det. out 0 v or 4.0 v 3.3 k 130 k 3.3 k 470 pf 15 k 18 k 150 pf rf input ground data output comp(+) comp(? squelch status squelch control demod out demod filter quad input 1 470 k 470 pf 47 k 47 k 0.1 0.1 f = 10.7 1.5 h a pp lication not e s (continued) depending on the external circuit, inverted or noninverted data is available at pin 18. inverted data makes the higher fre- quency in the fsk signal a ?ne?when the local oscillator is above the incoming rf. figure 5 schematic shows the com- parator with hysteresis. in this circuit the dc reference volt- age at pin 17 is about the same as the demodulated output voltage (pin 13) when no signal is present. this type circuit is preferred for systems where the data rates can drop to zero. some systems have a low frequency limit on the data rate, such as systems using the mc3850 acia that has a start or stop bit. this defines the low frequency limit that can appear in the data stream. figure 5 circuit can then be changed to a circuit configuration as shown in figure 6. in figure 6 the ref- erence voltage for the comparator is derived from the demodu- lator output through a low pass circuit where is much lower than the lowest frequency data rate. this and similar circuits will compensate for small tuning changes (or drift) in the quadrature detector. squelch status (pin 15) goes high (squelch off) when the input signal becomes greater than some preset level set by the resistance between pin 14 and ground. hysteresis is added to the circuit externally by the resistance from pin 14 to pin 15. legacy applications information
www.lansdale.com page 6 of 9 issue a lansdale semiconductor, inc. ml3356 c i t a m e h c s l a n r e t n i . 7 e r u g i f 9 5 4 3 2 0 2 1 6 7 9 8 9 1 5 4 1 5 1 1 1 7 1 8 1 6 1 0 1 2 1 3 1 5 2 2 5 3 1 4 3 5 3 1 5 3 1 5 3 1 5 3 1 5 3 1 5 3 1 5 3 1 9 4 7 4 8 4 0 5 1 5 2 5 5 4 6 4 3 4 k 5 . 2 1 4 0 4 2 4 4 4 9 3 k 0 . 1 8 3 7 3 4 3 3 3 2 3 1 3 6 3 k 0 . 1 k 0 . 1 5 3 f p 0 . 5 0 3 9 2 k 0 1 k 0 1 k 0 1 k 0 1 k 0 . 1 k 0 . 1 6 2 5 2 8 2 7 2 4 6 3 6 2 6 1 6 0 6 k 0 . 1 k 0 . 1 k 0 5 k 0 5 k 0 . 1 k 0 . 1 k 0 . 1 k 0 . 1 k 0 . 1 k 0 . 1 k 0 . 1 k 0 . 1 k 0 . 1 k 0 . 1 k 0 . 1 k 0 . 1 4 2 3 2 2 2 1 2 0 2 9 1 8 1 7 1 6 1 5 1 4 1 3 1 k 0 . 2 k 0 . 2 k 0 . 2 k 0 . 2 0 0 5 k 0 1 k 0 2 k 0 . 5 k 0 1 k 0 2 k 0 2 k 0 1 4 9 0 8 3 9 9 7 8 7 2 9 0 9 2 8 9 8 1 9 5 8 6 8 7 8 4 8 3 8 1 8 7 7 6 7 5 7 3 7 2 7 0 7 9 6 8 6 7 6 6 6 1 7 5 6 2 1 1 1 2 3 4 5 8 7 6 9 0 1 k 0 . 1 k 0 . 1 k 0 . 5 k 0 . 5 f p 0 2 0 3 3 0 3 3 k 0 . 5 3 5 4 5 5 5 6 5 7 5 8 5 k 0 . 1 k 0 . 1 k 0 . 5
www.lansdale.com page 7 of 9 issue a lansdale semiconductor, inc. ml3356 spi c12 .1uf t e d r a c c7 150pf l3 1uh p1 c6 15pf c5 47pf c4 1nf l2 1uh +v v1 5v c3 .1uf l1 1uh c2 47pf c1 10pf c c v f r d n g n i f r t u o a t a d d n g n i d a u q s a i b d a u q t i m e c s o l o c c s o t u o x i m c c v f i n i m i l s a i b m i l s a i b m i l + p m o c - p m o c s u t a t s q s l r t c q s t u o f u b l i f m e d _ 6 5 3 3 l m 1 p 2 p 3 p 4 p 5 p 6 p 7 p 8 p 9 p 0 1 p1 1 p 2 1 p 3 1 p 4 1 p 5 1 p 6 1 p 7 1 p 8 1 p 9 1 p 0 2 p u1 c21 10pf d2 mv209 j2 n i c s o t u o c s o t u o f e r n i f n i d b n e k l c t u o d r f d d v v s h p r s h p t u o d p s s v d l v f 0 7 1 5 4 1 c m 1 p 2 p 3 p 4 p 5 p 6 p 7 p 8 p 9 p 0 1 p 1 1 p 2 1 p 3 1 p 4 1 p 5 1 p 6 1 p u3 c20 .1uf c19 .1uf c18 1nf xtal2 1.000mhz c17 27pf c16 27pf +v v3 5v c15 .1uf r12 10k 40% c8 470pf cerfil u2 c9 .01uf c10 .01uf c11 .01uf +v v2 5v +v v4 5v t u o a t a d r10 10k r9 3.3k r8 10k r7 2.7k r6 1meg r5 130k r4 10k r3 18k r2 330k r1 10k r11 3.3k r13 3.3k r14 15k r15 18k r17 330 r16 330 figure 8 typical application using a pll with l.o. less than 185 mhz. loop filter vco rf in figure 8 shows a typical application using the mc145170/ml145170 pll device. the pll allows the l.o. to be used as a v co thus allowing multi - channel operation.
www.lansdale.com page 8 of 9 issue a lansdale semiconductor, inc. ml3356 spi c12 .1uf t e d r a c c7 150pf l3 1uh p1 c6 15pf c5 47pf c4 1nf l2 1uh +v v1 5v c3 .1uf l1 1uh c2 47pf c1 10pf c c v f r d n g n i f r t u o a t a d d n g n i d a u q s a i b d a u q t i m e c s o l o c c s o t u o x i m c c v f i n i m i l s a i b m i l s a i b m i l + p m o c - p m o c s u t a t s q s l r t c q s t u o f u b l i f m e d _ 6 5 3 3 l m 1 p 2 p 3 p 4 p 5 p 6 p 7 p 8 p 9 p 0 1 p 1 1 p 2 1 p 3 1 p 4 1 p 5 1 p 6 1 p 7 1 p 8 1 p 9 1 p 0 2 p u1 c21 10pf d2 mv209 j2 c20 .1uf c19 .1uf c18 1nf xtal2 1.000mhz c17 27pf c16 27pf +v v3 5v c15 .1uf r12 10k 40% c8 470pf cerfil u2 c9 .01uf c10 .01uf c11 .01uf +v v2 5v +v v4 5v t u o a t a d n i c s o t u o c s o p v c c v o d n i f d l d n g k l c a t a d e l c f w s i b t u o f p s h p r s h p 2 0 2 2 1 l m 1 p 2 p 3 p 4 p 5 p 6 p 7 p 8 p9 p 0 1 p 1 1 p 2 1 p 3 1 p 4 1 p 5 1 p 6 1 p u4 r10 10k r9 3.3k r8 10k r7 2.7k r6 1meg r5 130k r4 10k r3 18k r2 330k r1 10k r11 3.3k r13 3.3k r14 15k r15 18k r17 330 r16 330 figure 9 typical application using a pll with l.o. greater than 185 mhz. loop filter vco rf in figure 9 shows a typical application using the ml12202 pll device. the pll (ml12202) allows the l.o. to be used as a v co thus allowing multli-channel operation.
www.lansdale.com page 9 of 9 issue a lansdale semiconductor, inc. ml3356 p dip 20 = rp plastic package (ml3356rp) case 738?3 so 20 = -6p plastic package (ml3356-6p) case 751d?3 (so?0l) outline dimensions 0.050 bsc 0.100 bsc 0.300 bsc 1.27 bsc 2.54 bsc 7.62 bsc min min max max millimeters inches dim 25.66 6.10 3.81 0.39 1.27 0.21 2.80 0 0.51 27.17 6.60 4.57 0.55 1.77 0.38 3.55 15 1.01 1.010 0.240 0.150 0.015 0.050 0.008 0.110 0 0.020 1.070 0.260 0.180 0.022 0.070 0.015 0.140 15 0.040 a b c d e f g j k l m n notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension ??to center of lead when formed parallel. 4. dimension ??does not include mold flash. 5. 738?2 obsolete, new standard 738?3. ? c k n e gf d 20 pl j 20 pl l m ? seating plane 1 10 11 20 0.25 (0.010) t a m m 0.25 (0.010) t b m m b min min max max millimeters inches dim a b c d f g j k m p r 0.510 0.299 0.104 0.019 0.035 0.012 0.009 7 0.415 0.029 0.499 0.292 0.093 0.014 0.020 0.010 0.004 0 0.395 0.010 12.95 7.60 2.65 0.49 0.90 0.32 0.25 7 10.55 0.75 12.65 7.40 2.35 0.35 0.50 0.25 0.10 0 10.05 0.25 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. 751d?1, and ?2 obsolete, new standard 751d?3. 1.27 bsc 0.050 bsc ? ? p 10 pl 1 10 11 20 g ? d 20 pl k c seating plane r x 45 m f j 0.25 (0.010) b m m 0.25 (0.010) t b a m s s lansdale s emiconductor reserves the right to make changes without further notice to any products herein to improve reliabili- ty, function or design. lansdale does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. ?ypical parameters which may be provided in lansdale data sheets and/or specifications can vary in different applications, and actual performance may vary over time. all operating parameters, including ?ypicals must be validated for each customer application by the customers technical experts. lansdale s emiconductor is a registered trademark of lansdale s emiconductor, inc.

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